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april 2011 doc id 17697 rev 2 1/13 13 STN3N40K3 n-channel 400 v, 3 , 1.8 a sot-223 supermesh3? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse rcovery characteristics zener-protected application switching applications description the device is made using the supermesh3 tm power mosfet technology that is obtained via improvements applied to stmicroelectronics? supermesh3 tm technology combined with a new optimized vertical structure. the resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it espe cially suitable for the most demanding applications. figure 1. internal schematic diagram order code v dss r ds(on) max i d p w STN3N40K3 400 v < 3.4 1.8 a 3.3 w sot-223 1 2 2 3 d(2) g(1) s(3) am01476v1 table 1. device summary order code marking package packaging STN3N40K3 3n40k3 sot-223 tape and reel www.st.com
contents STN3N40K3 2/13 doc id 17697 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STN3N40K3 electrical ratings doc id 17697 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain source voltage 400 v v gs gate-source voltage 30 v i d drain current continuous t c = 25 c 1.8 (1) 1. drain current limited by maximum temperature allowed. a i d drain current continuous t c = 100 c 1 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current pulsed 7.2 a i ar (3) 3. pulse width limited by t jmax. avalanche current, repetetiv e or not repetetive 0.6 a e as (4) 4. starting t j = 25 c, i d = i ar , v dd = 50 v. single pulse avalanche energy 45 mj p tot total dissipation at t c = 25 c 3.3 w dv/dt (5) 5. isd 1.8 a, di/dt 400 a/s, v dd 80% v (br)dss. peak diode recovery voltage slope 12 v/ns v esd-(g-s) g-s esd (hbm c 0 100 pf; r = 1.5 k ) 1000 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max. 37.88 c/w r thj-a thermal resistance j unction-amb max. 60 c/w t l maximum lead temperature for soldering purpose 260 c
electrical characteristics STN3N40K3 4/13 doc id 17697 rev 2 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 400 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v, v ds =0 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 50 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 0.6 a 3 3.4 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 165 17 3 - pf pf pf c oss(er) (1) 1. is defined as a constant equi valent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance energy related v ds =0 to 320 v, v gs =0 -9-pf c oss(tr) (2) 2. is defined as a constant equivalent capac itance giving the same storage energy as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance time related -14-pf r g instrinsic gate resistance f=1 mhz open drain - 10 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 320 v, i d = 1.8 a, v gs = 10 v (see figure 16 ) - 11 2 7 - nc nc nc
STN3N40K3 electrical characteristics doc id 17697 rev 2 5/13 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn on delay time rise time turn off delay time fall time v dd = 200 v, i d = 0.6, r g = 4.7 , v gs = 10 v (see figure 15 ) - 7 8 18 14 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 1.8 7.2 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 0.6 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.8 a, di/dt = 100 a/s v dd = 60 v (see figure 17 ) - 145 490 7 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.8 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 17 ) - 166 580 7 ns nc a
electrical characteristics STN3N40K3 6/13 doc id 17697 rev 2 2.1 electrical characteristics figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance i d 1 0.1 0.01 0.001 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 8 994v1 i d 1.5 1.0 0.5 0 0 10 v d s (v) 20 (a) 5 15 25 2.0 2.5 5v 6v 7v v g s =10v 3 .0 3 .5 am09050v1 i d 1.5 1.0 0.5 0 0 4 v g s (v) 8 (a) 2 6 2.0 2.5 v d s =15v 3 .0 am0 8 995v1 v g s 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd = 3 20v i d =1. 8 a 10 12 3 00 200 100 0 3 50 v d s v g s 150 250 50 am0 8 996v1 r d s (on) 3 .2 3 .0 2. 8 2.6 0.2 0.6 i d (a) ( ) 0.4 0. 8 3 .4 3 .6 3 . 8 4.0 v g s =10v 4.2 1.0 1.2 1.4 1.6 am0 8 997v1
STN3N40K3 electrical characteristics doc id 17697 rev 2 7/13 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on resistance vs. temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs. temperature c 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 8 99 8 v1 e o ss 0. 3 0.2 0.1 0 0 100 v d s (v) ( j) 400 0.4 200 3 00 0.5 0.6 0.7 0. 8 am0 8 999v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 i d =50 a am09000v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 v g s =10v i d =0.6a am09001v1 v s d 0 0. 8 i s d (a) (v) 0.4 1.2 1.6 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c am0900 3 v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 i d =1ma am09002v1
electrical characteristics STN3N40K3 8/13 doc id 17697 rev 2 figure 14. maximum avalanche energy vs. starting tj e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 5 10 15 20 120 140 25 3 0 3 5 40 45 50 i d =0.6 a v dd =50 v am09004v1
STN3N40K3 test circuits doc id 17697 rev 2 9/13 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive wavefor m figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STN3N40K3 10/13 doc id 17697 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STN3N40K3 package mechanical data doc id 17697 rev 2 11/13 figure 21. sot-223 mechanical data drawing table 8. sot-223 mechanical data dim. mm min. typ. max. a 2.27 2.3 2.33 b 4.57 4.6 4.63 c0.20.40.6 d 0.63 0.65 0.67 e1 1.5 1.6 1.7 e4 0.32 f2.933.1 g 0.67 0.7 0.73 l1 6.7 7 7.3 l2 3.5 3.5 3.7 l6.36.56.7 c c b e l a b e1 l1 f g c d l2 e4 p00 8 b
revision history STN3N40K3 12/13 doc id 17697 rev 2 5 revision history table 9. document revision history date revision changes 29-jun-2010 1 first release. 08-apr-2011 2 document stat us promoted from preliminary data to datasheet.
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